Size effects and thermoelectric properties of BI0.98SB0.02 thin films

Authors

  • O.I. Rogacheva National Technical University “Kharkiv Polytechnic Institute” 2 Kyrpychova Str., Kharkiv, 61002, Ukraine
  • K.V. Novak National Technical University “Kharkiv Polytechnic Institute” 2 Kyrpychova Str., Kharkiv, 61002, Ukraine
  • D.S. Orlova National Technical University “Kharkiv Polytechnic Institute” 2 Kyrpychova Str., Kharkiv, 61002, Ukraine
  • O.M. Nashchekina National Technical University “Kharkiv Polytechnic Institute” 2 Kyrpychova Str., Kharkiv, 61002, Ukraine
  • O.Yu. Sipatov National Technical University “Kharkiv Polytechnic Institute” 2 Kyrpychova Str., Kharkiv, 61002, Ukraine
  • G.V. Lisachuk National Technical University “Kharkiv Polytechnic Institute” 2 Kyrpychova Str., Kharkiv, 61002, Ukraine

Keywords:

Bi0.98Sb0.02 solid solution, thin film, thickness, thermoelectric properties, size effect, oscillation period

Abstract

The room-temperature dependences of thermoelectric properties (the Seebeck coefficient S, the electrical conductivity σ, the Hall coefficient RH, and the thermoelectric power factor P =S2·σ) on the thickness (d = 5 - 250 nm) of the Bi0.98Sb0.02  solid solution thin films grown on mica substrates by thermal evaporation in vacuum from a single source were obtained. It is shown that the monotonic component of the σ(d) dependence is well described within the framework of the Fuchs-Sondheimer theory for the classical size effect. The presence of an oscillating component in the d-dependences of σ, S, RH and Sσ is attributed to the manifestation of the quantum size effect, and the experimentally determined period of quantum oscillations Δd = 45 ± 5 nm is in good agreement with the Δd value calculated theoretically within the framework of the model of an infinitely deep potential well. Bibl. 77, Fig. 1.

References

Rowe D.M. (Ed.) (1995). CRC Handbook of Thermoelectrics. London, New York, Washington: CRC Press, Boca Raton.

Anatychyk L.I. (1979). Termoelementy i termoelektricheskiie ustroistva. Spravochnik. [Thermoelements and thermoelectric devices. Reference book]. Kyiv: Naukova dumka [in Russian].

Brandt N.B., Chudinov S.M, Karavaev V.G. (1976). Study of a gapless state induced by a magnetic field in bismuth-antimony alloys. Zh. Eksper. Teor. Fiz. 70(6), 2296.

Brandt N.B., Chudinov S.M (1970). Oscillatory effects in semimetallic Bi1-xSbx alloys under pressure. Zh. Eksper. Teor. Fiz., 59(5), 1494-1507.

Oelgart G., Schneider G., Kraak W. (1976). The semiconductor-semimetal transition in

Bi1-xSbx alloys. Phys.Stat.Sol, 74(b), 1976, 75-78.

Brandt N.B., Semenov M.V., Falkovsky L.A. (1977). Experiment and theory on the magnetic

susceptibility of Bi-Sb alloys. J. Low Temp. Phys., 27(1,2), 75-90.

Lenoir B., Cassart M., Michenaud J.-P. (1996). Transport properties of Bi-rich Bi-Sb alloys. J. Phys. Chem. Solids, 57(1), 89-99.

Rogacheva E.I., Drozdova A.A., Nashchekina O.N., Dresselhaus M.S., Dresselhaus G. (2009). Transition into a gapless state and concentration anomalies in the properties of

Bi1-xSbx solid solutions. Appl. Phys. Lett., 94 (20), 202111.

Rogacheva E.I., Drozdova A.A., Nashchekina O.N. (2010). Percolation effects in semimetallic Bi-Sb solid solutions. Phys.Stat. sol, 207(A), 344–347.

Rogacheva E.I., Doroshenko A.N., Drozdova A.A., Nashchekina O.N., Men'shov Yu.V. (2020). Galvanomagnetic properties of polycrystalline Bi1-xSbx solid solutions in the concentration range x = 0-0.25. Functional Materials, 27(3), 488-496.

Rogacheva E.I. and Drozdova A.A. (2006). Thermoelectric properties of polycrystalline Bismuth-Antimony Solid Solutions. J. Thermoelectricity, 2, 22-28.

Doroshenko A.N., Rogacheva E.I., Drozdova A.A., Martynova K.V., Men’shov Yu.V.(2016). Thermoelectric properties of the polycrystalline Bi1-xSbx solid solutions in the concentration interval x = 0 – 0.25. J. Thermoelectricity, 4, 23-36.

Rogacheva E.I., Nashchekina O.N., Orlova D.S., Doroshenko A.N., Dresselhaus M.S. (2017). Influence of composition on the thermoelectric properties of Bi1-xSbx thin films. J. Electronic Mater. 46(7), 3821-3825.

Rogacheva E.I., Doroshenko A.N., Sipatov A.Yu. (2020). Electronic phase transitions in thin Bi1-xSbx films. J. Thermoelectricity, 2, 12-24.

Fu L., Kane C.L., Mele E.J. (2007). Phys. Rev. Lett., 98, 106803.

Hsieh D., Qian D., Wray L., Xia Y., Hor Y.S, Cava R.J., Hasan M.Z. (2008). Nature, 452, 970.

Hasan M.Z. Kane C.L. (2010). Rev. Mod. Phys., 82, 3045.

Dresselhaus M.S., Yu-Ming Lin, Koga T., Cronin S.B., Rabin O., Black M.R. , Dresselhaus G. (2001). In Semiconductors and Semimetals, Recent Trends in Thermoelectric Materials Research III, USA, San Diego, CA, Academic Press, 2001, 1–121.

Komnik Yu.F. (1979). Fizika metalicheskikh plionok [Physics of metal films]. Moscow: Atomizdat [In Russian].

Ogrin Y.F., Lutsky V.N., Yelinson M.I. (1966). Observation of quantum size effects in thin bismuth films. Sov. Phys. JETP Lett., 3, 71-73.

Sandomirskii V.B. (1967). Quantum size effect in semimetal films. Soviet Phys. JETP, 25(1), 101-106.

Duggal P., Rup R., Tripathi P. (1966). Quantum size effect in thin bismuth films. Appl. Phys. Let., 9(8), 293-295.

Komnik Yu.F., Buchsztab E.I. (1968). Observation of the quantum and classical size effects in polycrystalline thin bismuth films. Soviet Physics JETP, 54, 34-37.

Traon JJ.Y.le, Combet H.A. (1969). Electrical conductivity and Hall effect in thin layers of bismuth between 4,2K and 300K. J. Phys., 30, 419-426.

Thornburg D.D., Wayman C.M. (1969). Quantum and classical size effects in the thermoelectric power of thin bismuth films. Philos. Magaz., 20(167), 1153-1161.

Lal A., Duggal V.P. (1970). Thermoelectric power of thin single crystal bismuth films. Philos. Magaz., 22(175), 189-191.

Hoffman R.A., Frankl D.R. (1971). Electrical transport properties of thin bismuth films. Phys. Rev. B., 3(6), 1825-1833.

Komnik Yu.F., Andrievskii V.V., Buhshtab E.I. (1970). Features of the magnetoresistance of thin bismuth films. Physics of the Solid State, 12(11), 3266 – 3269.

Petrosyan V.I., Molin V.N., Dagman E.I., Tavger B.A., Skripkina P.A., Aleksandrov L.N. (1971). Features of quantum size effects in thin non-textured polycrystalline bismuth films obtained by the electric flash method. Fizika Metallov i Metallovedenie, 32, 725 – 730 [in Russian].

Garcia N., Kao Y.H., Strongin M. (1972). Galvanomagnetic studies of bismuth films in the quantum-size-effect region. Phys. Rev. B., 5(6), 2029-2039.

Subotowicz M., Jalochowski M., Mikolajczak B, Mikolajczak P. (1973). Measurements of the physical properties of thin Bi films from 180 to 40000 AA. Phys. Stat. Sol. A., 17(1),

-87.

Abrasimov V.M., Yegorov B.N., Krykin M.A. (1973). Size effect of kinetic coefficients in polycrystalline bismuth films. Sov. Phys. JETP, 37(1), 113-116.

Inoue M., Yagi H., Tamaki Y. (1973). Anomalies in the Hall coefficient of bismuth films. Japan. J. Appl. Phys., 12, 310.

Mikolajczak P., Piasek W., Subotowicz M. (1974). Thermoelectric power in bismuth thin films. Phys. Stat. Sol. A., 25(2), 619-628.

Borzyak P.G., Vatamanyuk V.I., Kulyupin Yu.A. (1974). Peculiarties of the thickness dependences of the bismuth films structure and resistivity. Phys. Stat. Sol. A., 22, 3-6.

Baba S., Sugawara H., Kinbara A. (1976). Electrical resistivity of thin bismuth films. Thin Solid Films, 31, 329-335.

Bondar E. A., Vatamanyuk V.I., Chumak A.A. (1976). Thickness dependence of the current carrier concentration in bismuth films. Тhin Solid Films, 34, 387-389.

Komnik Yu.F., Andrievsky V.V. (1977). Kinetic properties of electrons in bismuth thin films. Thin Solid Films, 42, 1-6.

Kochowski S., Opilski A. (1978). Concentration and mobility of charge carriers in thin polycrystalline films of bismuth. Thin Solid Films, 48, 345-351.

Saleh M., Buxo J., Dorville G., Sarrabayrouse G. (1979). Electrical and elastoresistance properties of evaporated thin films of bismuth. Revue de Physique Applique, 14, 405-413.

Asahi H., Kinbara A. (1980). Size effect in electrical properties of thin epitaxial bismuth

films. Thin Solid Films, 66, 131-137.

Boxus J., Uher C., Heremans J., Issi J -P. (1981). Size dependence of the transport properties of trigonal bismuth. Phys. Rev. B., 23, 449–452.

Akhtar S.M., Khawaja E.E. (1985). A study of the resistivity and the. thermoelectric power of thin films of Sb and Bi. Phys. Stat. Sol. A., 87, 335-340.

Damodara Das V., Soundararajan N. (1987). Size and temperature effects on the Seebeck coefficient of thin bismuth films. Phys. Rev. B., 35(12), 5990-5996.

Chu H.T., Zhang W. (1992). Quantum size effect and electric conductivity in thin films of pure bismuth. J. Phys. Chem. Solids, 53, 1059.

Rogacheva E.I., Grigorov S.N., Nashchekina O.N., Lyubchenko S.G., Dresselhaus M.S. (2003). Quantum-size effects in n-type bismuth thin films. Appl. Phys. Let., 82(15), 2628-2630.

Rogacheva E.I., Lyubchenko S.G., Nashchekina O.N., Meriuts A.V., Dresselhaus M.S. (2009). Quantum size effects and transport phenomena in thin Bi layers. Microelectronics Journal, 40, 728-730.

Rogacheva E.I., Lyubchenko S.G., Drozdova A.A. (2009). Effect of magnetic field on galvanomagnetic properties of mica/Bi/EuS heterostructures. Microelectronics Journal, 40, 821–823.

Mustafaev Z., Fraiman B.S., Chudnovskiy A.F. (1971). Thermal conductivity of thin layers of bismuth. Semiconductors, 5(1), 242-246 [in Russian].

Okun I.Z., Fraiman B.S., Chudnovskiy A.F. (1972). Magnetoresistance of thin bismuth layers. Semiconductors, 6(4), 715-717 [in Russian].

Burchakova V.I., Gitsu D.V., Kozlovskiy M.I. (1972). Features of thermoelectric power of bismuth thin films. Physics of the Solid State, 14(3), 1972, 907-909 [in Russian].

Fuchs К. (1938). The conductivity of thin metallic films according to the electron theory of metals Proc. Cambridge Philos. Soc., 34, 100-108.

Sondheimer E.H. (1952). The mean free path of electrons in metals. Adv. Phys., 1(1), 1-42.

Savchenko A.K., Lutskiy V.N., Rilik A.S. (1981). About the influence of quantum corrections on the resistance of thin bismuth films. Sov. Phys. JETP Lett., 34(6), 367-371.

Buhshtab E.I., Komnik Yu.F., Butenko A.V. Andrievskiy V.V. (1982). Features of the magnetoresistance of thin bismuth films in t he region of manifestation of quantum corrections. Sov. J. Low Temp. Phys., 8(4), 440-445.

Komnik Yu.F., Buhshtab E.I., Butenko A.V. Andrievskiy V.V. (1982). Localization effects in bismuth films in a weak magnetic field. Sov. J. Low Temp. Phys., 8(12), 1289-1292.

Komnik Yu.F., Bukhshtab E.I., Butenko A.V., Andrievsky V.V. (1982). Separation of the electron localization and interaction in bismuth film resistance. Solid State Communs., 44(6), 865-867.

Fumio Komori, Shun-inhi Kobayashi, Wataru Sasaki (1983). The anti-localization effect in Bi thin films. J. Phys. Soc. Japan, 52(2), 368-371.

Woerlee P.H., Verkade G.C., Jansen G.M. (1983). An experimental investigation on weak localisation, spin-orbit and interaction effects in thin bismuth films. J. Phys. C: Solid State Phys., 16, 3011-3024.

McLachlan D.S. (1983). Weak-localization, spin-orbit, and electron-electron interaction effects in two- and three-dimensional bismuth films. Phys. Rev. B., 28(12), 6821-6832.

Favennec M.M.E., Le Contellec M., Le Traon J.Y. (1972). Study of quantum size effects by elastroresistance, thermoelectric power and conductivity measurements in Bi and BixSb1-x. Thin Solid Films, 13(1), 73-79.

Favennec M.P., Le Contellec M. (1973). Quantum size effects in the thermoelectric power of Bi and BixSb1-x thin films. Solid State Communs., 13(2), 141-146.

Komnik Yu. F., Bukhshtab E. I., Nikitin Yu. V. (1975). Quantum size effect in bismuth films with antimony adding. Sov. J. Low Temp. Phys., 1, 243–246.

Bukhshtab E. I., Komnik Yu. F., Nikitin Yu. V. (1978). Electrical properties of thin bismuth-antimony films. I. Changes in the properties with varying composition. Sov. J. Low Temp. Phys., 4(8), 474 – 479.

Komnik Yu. F., Nikitin Yu. V., Bukhshtab E. I. (1978). Electrical properties of thin bismuth-antimony films. II. Changes in the properties with varying thickness. Sov. J. Low Temp. Phys., 4(9), 538 – 544.

Komnik Yu. F., Nikitin Yu. V., Bukhshtab E. I. (1878). Electrical properties of thin bismuth-antimony films. III. Quantum size effect. Sov. J. Low Temp. Phys., 4(10), 591 – 595.

Nikitin Yu. V., Bukhshtab E. I., Komnik Yu. F. Electrical properties of thin bismuth-antimony films. IV. Temperature dependence, Sov. J. Low Temp. Phys., 4(11), 1978.

– 684.

Komnik Yu. F., Bukhshtab E. I., Nikitin Yu. V. (1978). Specific features of the galvanomagnetic properties of thin films of Bi1-XSbX in the semimetal and semiconductor regions. Thin Solid Films., 52, 361 – 364.

Damodara Das V., Meena N. (1981). Electrical properties of Bi80Sb20 alloy thin films, vacuum-deposited at different substrate temperatures. J. Mater. Science, 16(12), 3489–3495.

Tang M.Y., Dresselhaus M.S., A band structure phase diagram calculation of 2D BiSb films, Materials research society symposium proceedings, 886, 2006, 129134.

Mallik R.C., Damodara Das V. (2005). Study of structural-, and thickness-dependent thermoelectric and electrical properties of Bi93Sb7 alloy thin films. J. Appl. Phys. 98, 0237101-0237108.

Mallik R.C., Damodara Das V. (2005). Size- and temperature-dependent thermoelectric and electrical properties of Bi88Sb12 alloy thin films. Vacuum, 77(3), 275-285.

Rogacheva E.I., Orlova D.S., Dresselhaus M.S., Tang S. (2011). Size effects in Bi-Sb solid solutions thin films. MRS Online Proceedings Library, 1314, 1-6.

Rogacheva E.I., Orlova D.S., Nashchekina O.N., Dresselhaus M.S., Tang S. (2012).

Thickness dependence oscillations of transport properties in thin films of atopological insulator Bi91Sb9. Appl. Phys. Lett., 101, 023108(1-4).

Michenaud J-P., Issi J-P. (1972). Electron and hole transport in bismuth. J. Phys. C:Solid State Phys., 5, 3061-3072.

Rogacheva E.I., Nashchekina O.N., Tavrina T.V., Us M.А., Dresselhaus M.S., Cronin S.B., Rabin O. (2003). Quantum size effects in IV-VI quantum wells. Physica E, 17, 313-315.

Rogacheva E.I., Budnik A.V., Sipatov A.Yu., Nashchekina O.N., Dresselhaus M.S.(2015). Thickness dependent quantum oscillations of transport properties in topological insulator Bi2Te3 thin films. Appl. Phys. Lett. 106, 053103.

How to Cite

Rogacheva, O., Novak, K., Orlova, D., Nashchekina, O., Sipatov, O., & Lisachuk, G. (2024). Size effects and thermoelectric properties of BI0.98SB0.02 thin films. Journal of Thermoelectricity, (4), 14–33. Retrieved from http://jte.ite.cv.ua/index.php/jt/article/view/43

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