Thermoelectric Power Factor of Flat-Layer Semiconductor Structures
DOI:
https://doi.org/10.63527/1607-8829-2026-2-40-46Keywords:
2D structures, quantum wells, conduction miniband, thermoelectric power factor, pulse relaxation time, electron thermal conductivity, thermoelectric figure of meritAbstract
The influence of nanostructuring on the thermoelectric power factor of flat-layer semiconductor structures is studied in the quasi-classical one-miniband approximation. The change in the pulse relaxation time of current carriers in 2D structures as compared to their 3D counterparts in the case of mixed scattering of the pulse by acoustic phonons and point defects in the case of arbitrary statistics is taken into consideration. The analytical dependence of the thermoelectric power factor on the chemical potential and the width of the conduction miniband in the direction of the superlattice axis is established.
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