Thermopower in semiconductor superlattices at scattering of current carriers by phonons and point defects

Authors

  • V.S. Zakordonets Ternopil National Technical University named after Ivan Pulyuy, st. Russian, 56, Ternopil, 46001, Ukraine

Keywords:

Seebeck coefficient, superlattice figure of merit, thermoEMF

Abstract

In the quasi-classical one-miniband approximation, the thermopower of semiconductor superlattices (SL) is investigated in the case of arbitrary statistics and at scattering of charge carriers by acoustic phonons, point defects, and nonpolar optical phonons, taking into account the change in the relaxation time as compared to bulk materials.  An analytical dependence of the thermopower on the reduced width of the conduction band in the direction of the superlattice axis is established. It is shown that the thermopower of the superlattice increases with an increase in the width of the conduction miniband, asymptotically approaching the limiting value at β ≥ 10. Bibl. 17, Fig. 3.

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How to Cite

Zakordonets, V. (2024). Thermopower in semiconductor superlattices at scattering of current carriers by phonons and point defects. Journal of Thermoelectricity, (1), 23–31. Retrieved from http://jte.ite.cv.ua/index.php/jt/article/view/37

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