Electronic phase transitions in thin Bi1-XSbX films
Keywords:
Bi1-xSbx, thin film, solid solution, concentration, phase transition, thermoelectric properties, galvanomagnetic propertiesAbstract
The purpose of the present work is to study the concentration dependences of thermoelectric (TE) and galvanomagnetic properties of thin Bi1-xSbx films in the range x = 0 – 0.25. The thin films with thicknesses d = (250 ± 10) nm were prepared by thermal evaporation in vacuum of Bi1-xSbx polycrystals onto (111) mica substrates and the transport properties (the electrical conductivity, Seebeck coefficient, Hall coefficient, electronic and hole mobility, magnetoresistance) of the films were measured at room temperature. It was established that all anomalies in the concentration dependences of the properties, observed earlier in the Bi1-xSbx bulk crystals and attributed to electronic phase transitions, were reproduced in thin films. The data obtained represent another evidence of the existence of the concentration peculiarities in the transport properties of Bi1-xSbx solid solutions, indicate a good correspondence between the compositions of Bi1-xSbx initial polycrystals and those of the thin films, and should be taken into account when interpreting the results of studies and predicting properties of Bi1-xSbx crystals and thin films. Bibl. 21. Fig. 4.
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