Optimization of Properties of a New Thermoelectric Material Obtained by Doping of n-Ti1-xNbxNiSn Semiconductor with Sb Atoms
DOI:
https://doi.org/10.63527/1607-8829-2025-4-41-52Keywords:
thermoelectric material, semiconductor, electronic structure, electrical resistivity, thermopower coefficient, thermoelectric figure of meritAbstract
The structural, electrokinetic, and energetic properties of the new thermoelectric material n-Ti1-xNbxNiSn1-ySby, х=0.01–0.02, у=0–0.03, obtained by doping the semiconductor n-Ti1-xNbxNiSn with Sb atoms (4d105s25p3) by replacing Sn atoms (4d105s25p2) were investigated. The nature of the generated energy states and mechanisms of electrical conductivity were established. It was shown that at varying concentrations of Sb atoms in the crystallographic position 4c, structural defects of a donor nature are generated, and the corresponding energy states εDSb(Sn) are generated in the band gap εg of the semiconductor. Optimization of the properties of the n-Ti1-xNbxNiSn solid solution by doping the n-type semiconductor with a donor impurity leads to a decrease in the compensation degree and meets the conditions for achieving maximum efficiency of thermal energy conversion into electrical energy. A new semiconductor thermoelectric material, Ti1-xNbxNiSn1-ySby, with high thermoelectric power values, was obtained.
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