Research of the thermoelectric material Lu1-xVxNiSb: modeling of properties
Keywords:
electronic structure, figure of merit of thermoelectric material, resistivity, thermopower coefficientAbstract
The result of modeling the crystal and electronic structures, thermodynamic and kinetic properties of Lu1-xVxNiSb is establishing the nature of the generated energy states. It is shown that the semiconductor solid solution Lu1-xVxNiSb is a promising thermoelectric material, and at a temperature of Т≈620 K and a concentration of Lu0.99V0.01NiSb, the thermoelectric factor Z values reach the maximum values of ZT = 0.62. It was established that the impurity atoms of V (3d34s2), introduced into the structure of the LuNiSb compound, simultaneously occupy the crystallographic positions 4a of Lu atoms (5d16s2) and 4c of Ni atoms (3d84s2) in different ratios, generating in the band gap eg impurity donor εDV and acceptor eANi energy states. The ratio of concentrations of donors and acceptors determines the location of the Fermi level εF and the mechanisms of electrical conductivity.
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