Experimental investigations of the properties of a new thermoelectric material Tm1-xVxNiSb
Keywords:
electronic structure, electric resistivity, Seebeck coefficientAbstract
The structural, kinetic, and energy properties of the Tm1-xVxNiSb thermoelectric material were studied in the ranges: T=80–400 K, x=0–0.10. It is shown that V atoms can simultaneously occupy different crystallographic positions in different ratios, generating defects of acceptor and donor nature. This gives rise to the corresponding acceptor and donor states in the bandgap εg Tm1-xVxNiSb. The mechanism of formation in Tm1-xVxNiSb of two types of acceptor states with different depth of occurrence was established: shallow acceptors generated by vacancies in the structure of half-Heusler phase TmNiSb, and deep acceptors formed by defects when Ni atoms are replaced by V in the 4c position. The ratio of the concentrations of generated defects determines the position of the Fermi level εF and the conduction mechanisms. The investigated Tm1-xVxNiSb solid solution is a promising thermoelectric material. Bibl. 12, Fig. 7.
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